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C2139 BC817 SAA7196H E000916 2SK301 SURCK 10310 DS2120A
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 On-Region Characteristics.
VGS= 4.5V 2.5V 3.0V 2.0V
On-Resistance Variation with Drain Current and Gate Voltage.
RDS(ON), Normalized Drain-source on-resistance
2.5
20
ID, Drain current(A)
16
2
VGS= 2.0V
12
1.5
2.5V 3.0V 4.5V
8
1.5V
4
1
0
0
0.4
0.8
1.2
1.6
2
0.5 0 5 10 15 20
VDS, Drain to Source Voltage(V)
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
RDS(ON), On-resistance(OHM)
RDS(ON), Normalized Drain-source on-resistance
1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
0.08 ID=6.5A 0.06
ID= 6.5A VGS= 4.5V
0.04
TA= 125C
0.02
TA= 25C
0 1 2 3 4 5
TJ, Junction Temperature(C)
VGS, Gate to Source Voltage(V)
Transfer Characteristics.
Is, Reverse Drain Current (A)
20
VDS= 5V
Body Diode Forword Voltage Variation with Source Current and Temperature.
100
VGS= 0V
125C 25C
TA= -55C
10 1 0.1 0.01 0.001
TJ= 125C 25C -55C
ID, Drain Current(A)
15
10
5
0
0.5
1
1.5
2
2.5
0.0001 0
0.2
0.4
0.6
0.8
1
1.2
VGS, Gate to Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Gate-Charge Characteristics
VGS, Gate-Source Voltage(V)
5
ID = 6.5A VDS= 5V
Capacitance Characteristics
1800
f =1MHz VGS=0 V
4
10V
1500
Capacitance(pF)
3
1200
Ciss
900 600 300
2
1
0 0 2 4 6 8 10 12 14
Coss Crss
0 5 10 15 20
0
Qg, Gate Charge (nC)
VDS, Drain to Source Voltage(V)
Maxmum Safe Operating Area.
100 RDS(ON) LIMIT 100 1ms s
4 5
Single Pulse Maximum Power Dissipation.
SINGLE PULSE VGS= 10V R JA=156 C/W TA=25 C
ID,Drain Current(A)
10
Power(W)
10 100
10ms 1 1s DC 0.1 100ms
3
2
VGS =4.5V SINGLE PULSE R JA=156 C/W TA=25C
1
0.01 0.1
1
0 0.1
1
10
100
1000
VGS,Drain-Source Voltage(V)
Single Pulse Time(SEC)
Transient Thermal Response Curve.
r(t), Normalized Effective Transient Thermal Resistance
1 D=0.5
0.5
0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 Single Pulse
R R
JA(t)
JA=156
= r(t) * R C/W
P(pk)
t1 t2
TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2
0.01 0.1 1 10 100 300
0.01 0.0001
0.001
t1 Time(Sec)


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